An increase in temperature increases the width of depletion layer.
True
False
Cannot say
It depends
Correct answer is B
With increase in temperature, width of depletion layer decreases.
In an n-p-n transistor biased for operation in forward active region
emitter is positive with respect to base
collector is positive with respect to base
base is positive with respect to emitter and collector is positive with respect to base
none of the above
Correct answer is C
In forward active mode, emitter base junction is forward biased and base collector junction is reverse biased.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is B
A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.
If αac for transistor is 0.98, then βac is equal to
51
49
47
45
Correct answer is B
No explanation has been provided for this answer.
Crossover distortion behaviour is characteristic of
class A O/P stage
class B O/P stage
class AB output stage
common pulse O/P state
Correct answer is B
No explanation has been provided for this answer.
Customer Care Executive in a Telecommunications Company
Treasury & Risk Manager at AAA Finance and Investment Company Limited
HR and Administration Officer at CBM Global Disability Inclusion
Storekeeper at Transgeneration Enterprises Limited
Volunteer HR Manager at Sim Impacting Lives Foundation
Partnerships and Network Lead at Adewunmi Desalu Parkinson's Foundation
Account Officer at Bons Industries Limited
Manager - Sales and Trade Development, Lagos Boundary at MTN Nigeria
Permit to Work Coordinator at WTS Energy
Business Development Executive at ARCO Worldwide Services Limited