Assertion (A): A p-n j...
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
The increase in reverse resistance is due to widening of depletion layer.
At very high temperatures, the extrinsic semi conductors become intrinsic because ...
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down. Re...
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA ...
In an n channel JFET, the gate is ...
Secondary emission is always decremental. ...
At room temperature, the current in an intrinsic semiconductor is due to ...