Assertion (A): A p-n j...
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
The increase in reverse resistance is due to widening of depletion layer.
In a bipolar transistor, the barrier potential is ...
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA ...
Assertion (A): A p-n junction has high resistance in reverse direction. Reason (R): When a revers...
Recombination produces new electron-hole pairs ...
Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE ...
In the circuit above, the function of resistor R and diode D are ...
When a voltage is applied to a semiconductor crystal, then the free electrons will flow ...
A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Amp...
In which region of a CE bipolar transistor is collector current almost constant? ...