Assertion (A): A p-n j...
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
The increase in reverse resistance is due to widening of depletion layer.
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA ...
An increase in temperature increases the width of depletion layer. ...
Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE ...
The power dissipation in a transistor is the product of ...
In a bipolar transistor, which current is largest ...
At room temperature, the current in an intrinsic semiconductor is due to ...
At very high temperatures, the extrinsic semi conductors become intrinsic because ...