Electronics and Communication Engineering Questions and Answers
Prepare for your Electronics and Communication Engineering exams/aptitude tests, assess your knowledge of electronics and communication equipment with these ECE questions and answers.
Prepare for your Electronics and Communication Engineering exams/aptitude tests, assess your knowledge of electronics and communication equipment with these ECE questions and answers.
An increase in temperature increases the width of depletion layer.
True
False
Cannot say
It depends
Correct answer is B
With increase in temperature, width of depletion layer decreases.
In an n-p-n transistor biased for operation in forward active region
emitter is positive with respect to base
collector is positive with respect to base
base is positive with respect to emitter and collector is positive with respect to base
none of the above
Correct answer is C
In forward active mode, emitter base junction is forward biased and base collector junction is reverse biased.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is B
A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.
If αac for transistor is 0.98, then βac is equal to
51
49
47
45
Correct answer is B
No explanation has been provided for this answer.
Crossover distortion behaviour is characteristic of
class A O/P stage
class B O/P stage
class AB output stage
common pulse O/P state
Correct answer is B
No explanation has been provided for this answer.
As compared to an ordinary semiconductor diode, a Schottky diode
has higher reverse saturation current
has higher reverse saturation current and higher cut in voltage
has higher reverse saturation current and lower cut in voltage
has lower reverse saturation current and lower cut in voltage
Correct answer is C
This is due to high electron concentration in metals.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
Avalanche breakdown occurs at high reverse voltage.
As compared to an ordinary semiconductor diode, a Schottky diode
has lower cut in voltage
has higher cut in voltage
lower reverse saturation current
both (b) and (c)
Correct answer is A
Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor diode.
Recombination produces new electron-hole pairs
True
False
Cannot say
It depends
Correct answer is B
Due to recombination, the number of electron-hole pairs is reduced.
Massive Recruitment at the Economic Community of West African States (ECOWAS)
HR and Administrative Supervisor at Nigeria Solar1988 Company
Administrative Assistant at CrossBoundary Energy (CBE)
Quality Control Officer in a Leading Cosmetic Manufacturing Company
Quality Assurance Officer at Contec Global Group
Service Engineer at Royal Power and Energy Limited
Information Management Coordinator at Save the Children
Human Resources (HR) Officer at Monikol (Nigeria) Limited
Accounts Manager at Advantage Health Africa
