Assertion (A): A p-n j...
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
The increase in reverse resistance is due to widening of depletion layer.
Crossover distortion behaviour is characteristic of ...
In which of these is reverse recovery time nearly zero? ...
The power dissipation in a transistor is the product of ...
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down. Re...
An increase in temperature increases the width of depletion layer. ...
A transistor has two p-n junctions. The batteries should be connected such that ...
As compared to an ordinary semiconductor diode, a Schottky diode ...